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ST's hi-rel and rad-hard power MOSFETs are specifically designed to cover hi-rel requirements and space applications. The are available with a range of breakdown voltages up to 100 V, drain current up to 48 A and RDS(on) down to 30 mΩ.
They are also qualified according to ESCC space specifications and meet 70 krad TID radiation performance.
Fully designed in Europe, these products are only subject to European export rules.
They are available both in die and packaged versions (including the in the through-hole hermetic package, TO-254AA).
| Part Number | General Description | Radiation Level | Agency Qualification | Agency Generic Spec | EPPL | Hi-Rel Package | Transistor Polarity | VDSS max (V) | Drain Current (Dc)(I_D) max (A) | RDS(on) max (Ω) | Total Gate Charge(Qg) max (nC) | Temperature range(T) |
| STRH100N10 | Rad-Hard N-Channel 100V - 48A MOSFET | 70 krad (Si) - SEE Hardened | ESCC | 5205/021 | Yes | TO-254AA | N-Channel | 100 | 48 | 0.035 | 162 | -55 to 150 C |
| STRH100N6 | Rad-Hard N-Channel 60V, 80A MOSFET | 70 krad (Si) - SEE Hardened | ESCC | 5205/022 | - | TO-254AA | N-Channel | 60 | 80 | 13.5 | 161 | -55 to 150 C |
| STRH12P10 | Rad-Hard P-channel 100 V, 12 A Power MOSFET | 100 krad(Si) - SEE characterized | ESCC | 5205/029 | - | TO-257AA | P-Channel | -100 | -12 | 0.3 | 40 | -55 to 150 C |
| STRH40N6 | Rad-Hard N-Channel 60V - 35A MOSFET | 70 krad (Si) - SEE Hardened | ESCC | 5205/024 | - | SMD.5 | N-Channel | 60 | 30 | 45 | 52 | -55 to 150 C |
| STRH40P10 | Rad-Hard P-Channel 100 V - 40A MOSFET | 100 krad (Si) - SEE Hardened | ESCC | 5205/025 | Yes | TO-254AA | P-Channel | -100 | -34 | 0.075 | 200 | -55 to 150 C |
| STRH8N10 | Rad-Hard N-Channel 100V - 6A MOSFET | 70 krad (Si) - SEE hardened | ESCC | 5205/023 | - | SMD.5 | N-Channel | 100 | 8 | 0.3 | 22 | -55 to 150 C |
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