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| Circuit operating current I(A) = 50 A | |||
| Type | Voltage [V] | Integrated functions and operating parameters | Application |
| PM50CBS060 | 600 | Adopting 4th generation IGBT modules for which track width is 1 µm | noise level for loads of 3.7 kW in servo motors and motor control systems |
| built-in new diode (soft reverse recovery characteristics) to protect the transistor (separately for each IGBT included in the circuit) | |||
| temperature control system (measurement only on a chip (IGBT) | |||
| integrated monolithic IGBT transistor gate drive | |||
| various safety systems (overvoltage, temperature, overload) | |||
| flat, insulated housing, pin outputs | |||
| PM50CSD060 | 600 | Adopting 4th generation IGBT modules for which track width is 1 µm | noise level for loads of 3.7 kW in servo motors and motor control systems |
| built-in new diode (soft reverse recovery characteristics) to protect the transistor (separately for each IGBT included in the circuit) | |||
| temperature control system (measurement only on a chip (IGBT) | |||
| integrated monolithic IGBT transistor gate drive | |||
| various safety systems (overvoltage, temperature, overload) | |||
| flat, insulated housing, pin outputs + screw terminals (in accordance with 3rd generation connector standard – S Series) | |||
| PM50RSD060 | 600 | Adopting 4th generation IGBT modules for which track width is 1 µm | noise level for loads of 11 kW in servo motors and motor control systems |
| built-in new diode (soft reverse recovery characteristics) to protect the transistor (separately for each IGBT included in the circuit) | |||
| temperature control system (measurement only on a chip (IGBT) | |||
| integrated monolithic IGBT transistor gate drive | |||
| various safety systems (overvoltage, temperature, overload) | |||
| flat, insulated housing, pin outputs + screw terminals (in accordance with 3rd generation connector standard – S Series) | |||
| PM50RSD120 | 1200 | Adopting 4th generation IGBT modules for which track width is 1 µm | noise level for loads of 18.5 kW / 22.5 kW in standard inverters, servo motors and motor control systems |
| built-in new diode (soft reverse recovery characteristics) to protect the transistor (separately for each IGBT included in the circuit) | |||
| temperature control system (measurement only on a chip (IGBT) | |||
| integrated monolithic IGBT transistor gate drive | |||
| various safety systems (overvoltage, temperature, overload) | |||
| flat, insulated housing, pin outputs + screw terminals (in accordance with 3rd generation connector standard – S Series) | |||
| Prąd roboczy układu I(A) = 75A | |||
| Typ | Napięcie [V] | Integrated functions and operating parameters | Zastosowanie |
| PM75CBS060 | 600 | Adopting 4th generation IGBT modules for which track width is 1 µm | noise level for loads of 5.5 kW / 7.5 kW in standard inverters, servo motors and motor control systems |
| built-in new diode (soft reverse recovery characteristics) to protect the transistor (separately for each IGBT included in the circuit) | |||
| temperature control system (measurement only on a chip (IGBT) | |||
| integrated monolithic IGBT transistor gate drive | |||
| various safety systems (overvoltage, temperature, overload) | |||
| flat, insulated housing, pin outputs | |||
| PM75CSD060 | 600 | Adopting 4th generation IGBT modules for which track width is 1 µm | noise level for loads of 5.5 kW / 7.5 kW in standard inverters, servo motors and motor control systems |
| built-in new diode (soft reverse recovery characteristics) to protect the transistor (separately for each IGBT included in the circuit) | |||
| temperature control system (measurement only on a chip (IGBT) | |||
| integrated monolithic IGBT transistor gate drive | |||
| various safety systems (overvoltage, temperature, overload) | |||
| flat, insulated housing, pin outputs + screw terminals (in accordance with 3rd generation connector standard – S Series) | |||
| PM75RSD060 | 600 | Adopting 4th generation IGBT modules for which track width is 1 µm | noise level for loads of 5.5 kW / 7.5 kW in standard inverters, servo motors and motor control systems |
| built-in new diode (soft reverse recovery characteristics) to protect the transistor (separately for each IGBT included in the circuit) | |||
| temperature control system (measurement only on a chip (IGBT) | |||
| integrated monolithic IGBT transistor gate drive | |||
| various safety systems (overvoltage, temperature, overload) | |||
| flat, insulated housing, pin outputs + screw terminals (in accordance with 3rd generation connector standard – S Series) | |||
| Prąd roboczy układu I(A) = 100 A | |||
| Typ | Napięcie [V] | Integrated functions and operating parameters | Zastosowanie |
| PM100CBS060 | 600 | Adopting 4th generation IGBT modules for which track width is 1 µm | noise level for loads of 11 kW in servo motors and motor control systems |
| built-in new diode (soft reverse recovery characteristics) to protect the transistor (separately for each IGBT included in the circuit) | |||
| temperature control system (measurement only on a chip (IGBT) | |||
| integrated monolithic IGBT transistor gate drive | |||
| various safety systems (overvoltage, temperature, overload) | |||
| flat, insulated housing, pin outputs | |||
| PM100CSD060 | 600 | Adopting 4th generation IGBT modules for which track width is 1 µm | noise level for loads of 11 kW in standard inverters, servo motors and motor control systems |
| built-in new diode (soft reverse recovery characteristics) to protect the transistor (separately for each IGBT included in the circuit) | |||
| temperature control system (measurement only on a chip (IGBT) | |||
| integrated monolithic IGBT transistor gate drive | |||
| various safety systems (overvoltage, temperature, overload) | |||
| flat, insulated housing, pin outputs + screw terminals (in accordance with 3rd generation connector standard – S Series) | |||
| PM100RSD060 | 600 | Adopting 4th generation IGBT modules for which track width is 1 µm | noise level for loads of 11 kW in standard inverters, servo motors and motor control systems |
| built-in new diode (soft reverse recovery characteristics) to protect the transistor (separately for each IGBT included in the circuit) | |||
| temperature control system (measurement only on a chip (IGBT) | |||
| integrated monolithic IGBT transistor gate drive | |||
| various safety systems (overvoltage, temperature, overload) | |||
| flat, insulated housing, pin outputs + screw terminals (in accordance with 3rd generation connector standard – S Series) | |||
| PM100RSD060 | 600 | Adopting 4th generation IGBT modules for which track width is 1 µm | noise level for loads of 11 kW in standard inverters, servo motors and motor control systems |
| built-in new diode (soft reverse recovery characteristics) to protect the transistor (separately for each IGBT included in the circuit) | |||
| temperature control system (measurement only on a chip (IGBT) | |||
| integrated monolithic IGBT transistor gate drive | |||
| various safety systems (overvoltage, temperature, overload) | |||
| flat, insulated housing, pin outputs + screw terminals (in accordance with 3rd generation connector standard – S Series) | |||
| PM100RSD120 | 1200 | Adopting 4th generation IGBT modules for which track width is 1 µm | noise level for loads of 11 kW in standard inverters, servo motors and motor control systems |
| built-in new diode (soft reverse recovery characteristics) to protect the transistor (separately for each IGBT included in the circuit) | |||
| temperature control system (measurement only on a chip (IGBT) | |||
| integrated monolithic IGBT transistor gate drive | |||
| various safety systems (overvoltage, temperature, overload) | |||
| flat, insulated housing, pin outputs + screw terminals (in accordance with 3rd generation connector standard – S Series) | |||
| Prąd roboczy układu I(A) = 150 A | |||
| Typ | Napięcie [V] | Integrated functions and operating parameters | Zastosowanie |
| PM150CBS060 | 600 | Adopting 4th generation IGBT modules for which track width is 1 µm | noise level for loads of 15 kW in servo motors and motor control systems |
| built-in new diode (soft reverse recovery characteristics) to protect the transistor (separately for each IGBT included in the circuit) | |||
| temperature control system (measurement only on a chip (IGBT) | |||
| integrated monolithic IGBT transistor gate drive | |||
| various safety systems (overvoltage, temperature, overload) | |||
| flat, insulated housing, pin outputs | |||
| PM150CSD060 | 600 | Adopting 4th generation IGBT modules for which track width is 1 µm | noise level for loads of 15/18.5 kW in standard inverters, servo motors and motor control systems |
| built-in new diode (soft reverse recovery characteristics) to protect the transistor (separately for each IGBT included in the circuit) | |||
| temperature control system (measurement only on a chip (IGBT) | |||
| integrated monolithic IGBT transistor gate drive | |||
| various safety systems (overvoltage, temperature, overload) | |||
| flat, insulated housing, pin outputs + screw terminals (in accordance with 3rd generation connector standard – S Series) | |||
| PM150RSD060 | 600 | Adopting 4th generation IGBT modules for which track width is 1 µm | noise level for loads of 15/18.5 kW in standard inverters, servo motors and motor control systems |
| built-in new diode (soft reverse recovery characteristics) to protect the transistor (separately for each IGBT included in the circuit) | |||
| temperature control system (measurement only on a chip (IGBT) | |||
| integrated monolithic IGBT transistor gate drive | |||
| various safety systems (overvoltage, temperature, overload) | |||
| flat, insulated housing, pin outputs + screw terminals (in accordance with 3rd generation connector standard – S Series) | |||
| PM100RSD120 | 1200 | Adopting 4th generation IGBT modules for which track width is 1 µm | noise level for loads of 30 kW in standard inverters, servo motors and motor control systems |
| built-in new diode (soft reverse recovery characteristics) to protect the transistor (separately for each IGBT included in the circuit) | |||
| temperature control system (measurement only on a chip (IGBT) | |||
| integrated monolithic IGBT transistor gate drive | |||
| various safety systems (overvoltage, temperature, overload) | |||
| flat, insulated housing, pin outputs + screw terminals (in accordance with 3rd generation connector standard – S Series) | |||
| Prąd roboczy układu I(A) = 200 A | |||
| Typ | Napięcie [V] | Integrated functions and operating parameters | Zastosowanie |
| PM200CBS060 | 600 | Adopting 4th generation IGBT modules for which track width is 1 µm | noise level for loads of 18,5/22 kW in servo motors and motor control systems |
| built-in new diode (soft reverse recovery characteristics) to protect the transistor (separately for each IGBT included in the circuit) | |||
| temperature control system (measurement only on a chip (IGBT) | |||
| integrated monolithic IGBT transistor gate drive | |||
| various safety systems (overvoltage, temperature, overload) | |||
| flat, insulated housing, pin outputs | |||
| PM200CSD060 | 600 | Adopting 4th generation IGBT modules for which track width is 1 µm | noise level for loads of 22 kW in standard inverters, servo motors and motor control systems |
| built-in new diode (soft reverse recovery characteristics) to protect the transistor (separately for each IGBT included in the circuit) | |||
| temperature control system (measurement only on a chip (IGBT) | |||
| integrated monolithic IGBT transistor gate drive | |||
| various safety systems (overvoltage, temperature, overload) | |||
| flat, insulated housing, pin outputs + screw terminals (in accordance with 3rd generation connector standard – S Series) | |||
| PM200RSD060 | 600 | Adopting 4th generation IGBT modules for which track width is 1 µm | noise level for loads of 15/18.5 kW in standard inverters, servo motors and motor control systems |
| built-in new diode (soft reverse recovery characteristics) to protect the transistor (separately for each IGBT included in the circuit) | |||
| temperature control system (measurement only on a chip (IGBT) | |||
| integrated monolithic IGBT transistor gate drive | |||
| various safety systems (overvoltage, temperature, overload) | |||
| flat, insulated housing, pin outputs + screw terminals (in accordance with 3rd generation connector standard – S Series) | |||
| Prąd roboczy układu I(A) = 300 A | |||
| Typ | Napięcie [V] | Integrated functions and operating parameters | Zastosowanie |
| PM300CBS060 | 600 | Adopting 4th generation IGBT modules for which track width is 1 µm | noise level for loads of 30 kW in servo motors and motor control systems |
| built-in new diode (soft reverse recovery characteristics) to protect the transistor (separately for each IGBT included in the circuit) | |||
| temperature control system (measurement only on a chip (IGBT) | |||
| integrated monolithic IGBT transistor gate drive | |||
| various safety systems (overvoltage, temperature, overload) | |||
| flat, insulated housing, pin outputs | |||
| PM300CSD060 | 600 | Wykorzystanie modułów IGBT 4-tej generacji, dla których szerokość ścieżki wynosi 1µm | noise level for loads of 30 kW in standard inverters, servo motors and motor control systems |
| built-in new diode (soft reverse recovery characteristics) to protect the transistor (separately for each IGBT included in the circuit) | |||
| temperature control system (measurement only on a chip (IGBT) | |||
| integrated monolithic IGBT transistor gate drive | |||
| various safety systems (overvoltage, temperature, overload) | |||
| flat, insulated housing, pin outputs + screw terminals (in accordance with 3rd generation connector standard – S Series) | |||
| PM300RSD060 | 600 | Wykorzystanie modułów IGBT 4-tej generacji, dla których szerokość ścieżki wynosi 1µm | noise level for loads of 30 kW in standard inverters, servo motors and motor control systems |
| built-in new diode (soft reverse recovery characteristics) to protect the transistor (separately for each IGBT included in the circuit) | |||
| temperature control system (measurement only on a chip (IGBT) | |||
| integrated monolithic IGBT transistor gate drive | |||
| various safety systems (overvoltage, temperature, overload) | |||
| flat, insulated housing, pin outputs + screw terminals (in accordance with 3rd generation connector standard – S Series) | |||
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Eltron L.L.L.P.
ul. Brodzka 10 B
54-103 Wrocław
Helpline Mon.-Fri. 8.00-16.00
Tel.: +48 71 343 97 55
sklep@eltron.pl
Address:
Eltron L.L.L.P.
ul. Brodzka 10 B
54-103 Wrocław
Customer Service:
Helpline Mon.-Fri. 8.00-16.00
Tel.: +48 71 343 97 55
sklep@eltron.pl
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